A method for switching properties of perovskite thin film
materials, including the colossal magnetoresitive (CMR) and high
temperature superconducting (HTSC) materials, is provided. Short
electrical pulses are applied to the materials in thin films to
change both reversibly and non-reversibly the electrical, thermal,
mechanical and magnetic properties of the material. Reversible
resistance changes of over a factor of 10 are induced in CMR
materials at room temperature and in zero external magnetic field
by electrical pulsing. Applications of the method and materials to
form memory devices, resistors in electronic circuits which can be
varied in resistance and other applications are disclosed.
