An indium phosphide photovoltaic cell is provided where one or more
quantum wells are introduced between the conventional p-conductivity
and n-conductivity indium phosphide layer. The approach allows the
cell to convert the light over a wider range of wavelengths than a
conventional single junction cell and in particular convert efficiently
transparency losses of the indium phosphide conventional cell. The
approach hence may be used to increase the cell current output. A method
of fabrication of photovoltaic devices is provided where ternary InAsP
and InGaAs alloys are used as well material in the quantum well region
and results in an increase of the cell current output..
Inventors:
Freundlich, Alexandre (Houston, TX);
Renaud, Philippe (Houston, TX);
Vilela, Mauro Francisco (Houston, TX);
Bensaoula, Abdelhak (Houston, TX)
