A three-terminal non-volatile ferroelectric/superconductor thin film
field effect transistor (FsuFET). The FSuFET is used as a non-volatile
memory storage device that provides two static states and four transient
states. The FSuFET includes a superconducting film epitaxially grown on
a substrate layer. A ferroelectric thin film is then epitaxially grown
on the superconducting layer to form the gate of the FSuFET. A drain
electrode and a source electrode are then contacted to the superconducting
film on either side of the ferroelectric gate. In static mode, the two
polarization states of the ferroelectric gate correspond to the binary
"0" and "1" states, which are switched by applying a voltage pulse of
sufficient magnitude. In transient mode, the four states depend upon the
polarization state of the ferroelectric gate and the conductive state
(superconducting or non-superconducting) of the drain-source channel. The
four states are generated at the drain of the FSuFET and consist of a
positive, high pulse; a positive, low pulse; a negative, high pulse; and a
negative, low pulse.
Inventors:
Lin He (Dallas, TX);
Ignatiev, Alex (Houston, TX);
Wu, Nai Juan (Houston, TX)
